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CY7C1399B
256K(32K x 8) Static RAM
Features
* Single 3.3V power supply * Ideal for low-voltage cache memory applications * High speed -- 10/12/15 ns * Low active power -- 216 mW (max.) * Low-power alpha immune 6T cell * Plastic SOJ and TSOP packaging active LOW Output Enable (OE) and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected. An active LOW Write Enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins is present on the eight data input/output pins. The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and Write Enable (WE) is HIGH. The CY7C1399B is available in 28-pin standard 300-mil-wide SOJ and TSOP Type I packages.
Functional Description[1]
The CY7C1399B is a high-performance 3.3V CMOS Static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and
Logic Block Diagram
Pin Configurations
SOJ Top View
A5 A6 A7 A8 A9 A10 A11 A12 A13 A14
I/O 0
INPUT BUFFER
I/O0 I/O1
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
CE WE OE
ROW DECODER
I/O2
SENSE AMPS 32K x 8 ARRAY
I/O3 I/O4 I/O5
I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC WE A4 A3 A2 A1 OE A0 CE I/O7 I/O6 I/O5 I/O4 I/O3
COLUMN DECODER
POWER DOWN
I/O6 I/O7
A 10
A 11
A 12 A 13
Selection Guide
1399B-10 Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current L 10 60 500 50 1399B-12 12 55 500 50 1399B-15 15 50 500 50 1399B-20 20 45 500 50 Unit ns mA A A
Note: 1. For guidelines on SRAM system design, please refer to the `System Design Guidelines' Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation Document #: 38-05071 Rev. *D
A 14
* 3901 North First Street
* San Jose, CA 95134
* 408-943-2600 Revised July 11, 2005
CY7C1399B
Pin Configuration
TSOP Top View OE A1 A2 A3 A4 WE VCC A5 A6 A7 A8 A9 A10 A11
22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8
A0 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A14 A13 A12
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage on VCC to Relative GND[2] .... -0.5V to +4.6V DC Voltage Applied to Outputs in High Z State[2] ....................................-0.5V to VCC + 0.5V DC Input Voltage[2] .................................-0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... >200 mA
Operating Range
Range Commercial Industrial Ambient Temperature 0C to +70C -40C to +85C VCC 3.3V 300 mV 3.3V 300 mV
Electrical Characteristics Over the Operating Range[1]
7C1399B-10 Parameter VOH VOL VIH VIL IIX IOZ IOS ICC ISB1 ISB2 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[2] Input Load Current Output Leakage Current Output Short Circuit Current[3] VCC Operating Supply Current Automatic CE Power-Down Current -- TTL Inputs Automatic CE Power-Down Current -- CMOS Inputs[4] GND VI VCC, Output Disabled VCC = Max., VOUT = GND VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Max. VCC, CE VIH, VIN VIH, or VIN VIL,f = fMAX L Test Conditions VCC = Min., IOH = -2.0 mA VCC = Min., IOL = 4.0 mA 2.2 -0.3 -1 -5 Min. 2.4 0.4 VCC +0.3V 0.8 +1 +5 -300 60 5 4 500 50 2.2 -0.3 -1 -5 Max. 7C1399B-12 Min. 2.4 0.4 VCC +0.3V 0.8 +1 +5 -300 55 5 4 500 50 Max. Unit V V V V A A mA mA mA mA A A
Max. VCC, CE VCC - 0.3V, VIN VCC - 0.3V, or VIN 0.3V, L WE VCC - 0.3V or WE 0.3V, f = fMAX
Notes: 2. Minimum voltage is equal to - 2.0V for pulse durations of less than 20 ns. 3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. 4. Device draws low standby current regardless of switching on the addresses.
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CY7C1399B
Electrical Characteristics Over the Operating Range (continued)
1399B-15 Parameter VOH VOL VIH VIL IIX IOZ IOS ICC ISB1 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Load Current Output Leakage Current Output Short Circuit Current[3] VCC Operating Supply Current Automatic CE Power-Down Current -- TTL Inputs Automatic CE Power-Down Current -- CMOS Inputs[4] GND VI VCC, Output Disabled VCC = Max., VOUT = GND VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Max. VCC, CE VIH, VIN VIH, or VIN VIL, f = fMAX Max. VCC, CE VCC-0.3V, VIN VCC - 0.3V, or VIN 0.3V, WEVCC-0.3V or WE 0.3V, f=fMAX L Test Conditions VCC = Min., IOH = -2.0 mA VCC = Min., IOL = 4.0 mA 2.2 -0.3 -1 -5 Min. 2.4 0.4 VCC +0.3V 0.8 +1 +5 -300 50 5 4 500 L 50 2.2 -0.3 -1 -5 Max. 1399B-20 Min. 2.4 0.4 VCC +0.3V 0.8 +1 +5 -300 45 5 4 500 50 Max. Unit V V V V A A mA mA mA mA A A
ISB2
Capacitance[5]
Parameter CIN: Addresses CIN: Controls COUT Output Capacitance Description Input Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 3.3V Max. 5 6 6 Unit pF pF pF
AC Test Loads and Waveforms
R1 317 3.3V OUTPUT CL INCLUDING JIG AND SCOPE Equivalent to: THEVENIN EQUIVALENT 167 OUTPUT 1.73V R2 351 3.0V 10% GND 3 ns ALL INPUT PULSES 90% 90% 10% 3 ns
Note: 5. Tested initially and after any design or process changes that may affect these parameters.
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CY7C1399B
Switching Characteristics Over the Operating Range[6]
1399B-10 Parameter Read Cycle tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD Write tWC tSCE tAW tHA tSA tPWE tSD tHD tHZWE tLZWE Cycle[9, 10] Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE LOW to High Z[9] WE HIGH to Low Z[7] 3 10 8 7 0 0 7 5 0 7 3 12 8 8 0 0 8 7 0 7 ns ns ns ns ns ns ns ns ns ns Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z CE LOW to Low Z
[7] [7, 8]
1399B-12 Min. 12 Max. Unit ns 12 3 12 5 0 5 3 6 0 12 ns ns ns ns ns ns ns ns ns ns
Description
Min. 10
Max.
10 3 10 5 0 5 3 5 0 10
OE HIGH to High Z
[7]
CE HIGH to High Z[7, 8] CE LOW to Power-Up CE HIGH to Power-Down
Notes: 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and capacitance CL = 30 pF. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 8. tHZOE, tHZCE, tHZWE are specified with CL = 5 pF as in AC Test Loads. Transition is measured 500 mV from steady state voltage. 9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 10. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
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CY7C1399B
Switching Characteristics Over the Operating Range[6] (continued)
1399B-15 Parameter Read Cycle tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD Write tWC tSCE tAW tHA tSA tPWE tSD tHD tHZWE tLZWE Cycle[9, 10] Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE LOW to High WE HIGH to Low Z[9] Z[7] 3 15 10 10 0 0 10 8 0 7 3 20 12 12 0 0 12 10 0 7 ns ns ns ns ns ns ns ns ns ns Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z CE LOW to Low
[7]
1399B-20 Min. 20 Max. Unit ns 20 3 20 7 0 6 3 7 0 20 ns ns ns ns ns ns ns ns ns ns
Description
Min. 15
Max.
15 3 15 6 0 6 3 7 0 15
OE HIGH to High Z[7, 8] Z[7] Z[7, 8] CE HIGH to High
CE LOW to Power-Up CE HIGH to Power-Down
Data Retention Characteristics (Over the Operating Range - L version only)
Parameter VDR ICCDR tCDR tR Description VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Com'l VCC = VDR = 2.0V, CE > VCC - 0.3V, VIN > VCC - 0.3V or VIN < 0.3V Conditions Min. 2.0 0 0 tRC 20 Max. Unit V A ns ns
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CY7C1399B
Data Retention Waveform
DATA RETENTION MODE VCC 3.0V tCDR CE VDR > 2V 3.0V tR
Switching Waveforms
Read Cycle No. 1[11, 12]
tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID
Read Cycle No. 2[12, 13]
CE tACE OE tDOE tLZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tPD ICC 50% ISB tHZOE tHZCE DATA VALID tRC
HIGH IMPEDANCE
DATA OUT
Notes: 11. Device is continuously selected. OE, CE = VIL. 12. WE is HIGH for read cycle. 13. Address valid prior to or coincident with CE transition LOW.
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CY7C1399B
Switching Waveforms (continued)
Write Cycle No. 1 (WE Controlled)[9, 14, 15]
tWC ADDRESS CE tAW WE tSA tPWE tHA
OE tSD DATA I/O NOTE 16 tHZOE DATAINVALID tHD
Write Cycle No. 2 (CE Controlled)[9, 14, 15]
tWC ADDRESS CE tSA tAW WE tSD DATA I/O DATAINVALID tHD tHA tSCE
Write Cycle No. 3 (WE Controlled, OE LOW)[10, 15]
tWC ADDRESS CE tAW WE tSA tHA
tSD DATA I/O NOTE 16 tHZWE
Notes: 14. Data I/O is high impedance if OE = VIH. 15. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. 16. During this period, the I/Os are in the output state and input signals should not be applied.
tHD
DATA IN VALID tLZWE
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CY7C1399B
Truth Table
CE H L L L WE X H L H OE X L X H Input/Output High Z Data Out Data In High Z Mode Deselect/Power-Down Read Write Deselect, Output Disabled Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC)
Ordering Information
Speed (ns) 12 Ordering Code CY7C1399B-12VC CY7C1399B-12VXC CY7C1399B-12ZC CY7C1399B-12ZXC CY7C1399BL-12ZC CY7C1399BL-12ZXC CY7C1399B-12VXI 15 CY7C1399B-15VC CY7C1399B-15VXC CY7C1399B-15ZC CY7C1399B-15ZXC CY7C1399BL-15VC CY7C1399BL-15VXC CY7C1399BL-15ZXC CY7C1399B-15VI CY7C1399B-15VXI CY7C1399B-15ZI CY7C1399B-15ZXI 20 CY7C1399B-20ZC CY7C1399B-20ZXC Package Name V21 V21 Z28 Z28 Z28 Z28 V21 V21 V21 Z28 Z28 V21 V21 Z28 V21 V21 Z28 Z28 Z28 Z28 Package Type 28-Lead Molded SOJ 28-Lead Molded SOJ (Pb-Free) 28-Lead Thin Small Outline Package 28-Lead Thin Small Outline Package (Pb-Free) 28-Lead Thin Small Outline Package 28-Lead Thin Small Outline Package (Pb-Free) 28-Lead Molded SOJ (Pb-Free) 28-Lead Molded SOJ 28-Lead Molded SOJ (Pb-Free) 28-Lead Thin Small Outline Package 28-Lead Thin Small Outline Package (Pb-Free) 28-Lead Molded SOJ 28-Lead Molded SOJ (Pb-Free) 28-Lead Thin Small Outline Package (Pb-Free) 28-Lead Molded SOJ 28-Lead Molded SOJ (Pb-Free) 28-Lead Thin Small Outline Package 28-Lead Thin Small Outline Package (Pb-Free) 28-Lead Thin Small Outline Package 28-Lead Thin Small Outline Package (Pb-Free) Commercial Industrial Industrial Commercial Operating Range Commercial
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CY7C1399B
Package Diagrams
28-Lead (300-Mil) Molded SOJ V21
DIMENSIONS IN INCHES MIN. MAX.
PIN 1 ID
DETAIL A EXTERNAL LEAD DESIGN
14
1
0.291 0.300
0.330 0.350 0.026 0.032 0.014 0.020
OPTION 2
15
28
0.013 0.019
OPTION 1
0.697 0.713 0.120 0.140 0.050 TYP.
SEATING PLANE
0.007 0.013
0.004
A
0.025 MIN.
0.262 0.272
51-85031-*B
28-Lead Thin Small Outline Package Type 1 (8x13.4 mm) Z28
51-85071-*G
All products and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05071 Rev. *D Page 9 of 10
(c) Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1399B
Document History Page
Document Title: CY7C1399B 256K(32K x 8) Static RAM Document Number: 38-05071 REV. ** *A *B *C *D ECN NO. 107264 107533 116472 224340 386100 ISSUE DATE 05/25/01 06/28/01 09/17/02 See ECN See ECN ORIG. OF CHANGE SZV MAX CEA RKF SYT DESCRIPTION OF CHANGE Change from Spec #: 38-01102 to 38-05071 Add Low Power Add applications foot note to data sheet, page 1. Option 1 of the Orientation ID on TSOP-I Package Diagram [Page #9] removed Converted the Datasheet from "Preliminary" to "Final" Added Pb-Free offerings in the Ordering Information Edited the title to "256K (32K x 8) Static RAM" from "32K x 8 3.3V Static RAM"
Document #: 38-05071 Rev. *D
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